P25D22H-SSH-IT Ultra Low Power 2M/1M/512K-bitSerial Standard and Dual I/O Flash Memory chip
1 Overview
General
- Single 2.3V to 3.60V supply
- Industrial Temperature Range -25C to 85C
- Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
- Single, Dual IO mode
- 2M/1M/512K x 1 bit
- 1M/512K/256K x 2 bits
- Flexible Architecture for Code and Data Storage
- Uniform 256-byte Page Program
- Uniform 256-byte Page Erase
- Uniform 4K-byte Sector Erase
- Uniform 32K/64K-byte Block Erase
- Full Chip Erase
- Hardware Controlled Locking of Protected Sectors by WP Pin
- 128 bit unique ID for each device
- Fast Program and Erase Speed
- 2ms Page program time
- 12ms Page erase time
- 12ms 4K-byte sector erase time
- 12ms 32K-byte block erase time
- 12ms 64K-byte block erase time
- JEDEC Standard Manufacturer and Device ID Read Methodology
- Ultra Low Power Consumption
- 0.2uA Typical Deep Power Down current @3.0V
- 9uA Typical Standby current @3.0V
- 0.8mA Active Read current at 33MHz
- 2.0mA Active Program or Erase current
- High Reliability
- 100,000 Program / Erase Cycles
- 10-year Data Retention
- Industry Standard Green Package Options
- 8-pin SOP (150mil/208mil)/TSSOP/USON
- KGD for SiP
2 Description
The P25D22H/12H/07H is a serial interface Flash memory device designed for use in a wide variety of highvolume consumer based applications in which program code is shadowed from Flash memory into embeddedor external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it isideal for data storage as well, eliminating the need for additional data storage devices.
The erase block sizes of the device have been optimized to meet the needs of today's code and data storageapplications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.Because certain code modules and data storage segments must reside by themselves in their own eraseregions, the wasted and unused memory space that occurs with large sectored and large block erase Flashmemory devices can be greatly reduced. This increased memory space efficiency allows additional coderoutines and data storage segments to be added while still maintaining the same overall device density.Specifically designed for use in many different systems, the device supports read, program, and eraseoperations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programmingand erasing.
Pinout Details
| No. | Symbol | Extension | Remarks |
| 1 | CS# | Chip select |
|
| 2 | SO | SIO1 | Serial data output for 1 x I/OSerial data input and output for 2 x I/O read mode |
| 3 | WP# | - | Write protection active low |
| 4 | GND | - | Ground of the device |
| 5 | SI | SIO0 | Serial data input for 1x I/OSerial data input and output for 2 x I/O read mode |
| 6 | SCLK | - | Serial interface clock input |
| 7 | NC | - | Not connected |
| 8 | Vcc | - | Power supply of the device |
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.
